产品分类页_副本

N-Channel Enhancement Mode Field Effect Transistor Power MOSFET Fetures Applications Diode 20V, 5A CET-CES2312A

SIPMOS Small-Signal-Transistor N-Channel Fetures Applications Enhancement mode, Logic Level CCSEMI-BSS87

Switchmode Dual Schottky Barrier Power Rectifiers S40T100C TO-220AB

5.0Amp Surface Mounted Schottky Barrier Rectifiers SS54L SMB

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 VForward Current - 3.0A SS34

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 VForward Current - 5.0A SS54

G3S06516B TO-247AB 650V/16A Silicon Carbide Power Schottky Barrier Diode

1200V/10A G5S12010M TO-220F Schottky diodes

G3S06008J TO-220ISO Package 600V 8A Silicon Carbide Schottky Diode

1200V N-Channel MOSFET, 16mΩ/100A/18V, TO-247-4, ASC100N1200MT4

1200V N-Channel MOSFET, 16mΩ/100A/18V, TOLL ASR16N1200MD02

1200V/300A/5.7mΩ/18V SiC Mosfet Module, DWC3, ASC300N1200MD3

IGBT Modules VCES-1200V IC-100ALow Vce(sat) with Planner technology High short circuit capability(10us) MG100P12E2

IGBT Modules VCES-1200V IC-300AHigh short circuit capability(10us) Low inductance MG300HF12TLC2

IGBT Modules VCES-1200V IC-450A Low switching losses especially Eoff Low inductance package MG450HF12TLC2

IGBT VCE-650V IC-100A VCE(SAT) IC=100A 1.25V fetures applications Positive temperature coefficient DGQ100N65CTL1D

HCS80R250S TO-220FS 800V N-Channel Super Junction MOSFET

650V 0.15Ω Super Junction Power MOSFET, TO-220F, WML28N65F2

650V 0.028Ω Super Junction Power MOSFET, ID: 99A, VGS: 30V, TO-247, WMJ90N65SR

Lonten N-channel 500V, 13A Power MOSFET Fetures Applications Diode planar VDMOS technology. Lonten-LND13N50