DZ09238-F04

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DZ08038-F06

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DZ12038-F05

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DA04056-F01

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

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图片展示

U30D40C 30A 300-600V TO-247 (3P) Ultra-Fast Recovery Rectifier

    Encapsulation Structure: Chip Transistor

    Application: LED Drive Power Supply, Medical Power Supply

    Certification: RoHS, CE, ISO, CCC

    Luminous Intensity: Standard

    Color: Black

    Structure: TO-247

  • Parameters

    Encapsulation Structure: Chip Transistor

    Application: LED Drive Power Supply, Medical Power Supply

    Certification: RoHS, CE, ISO, CCC

    Luminous Intensity: Standard

    Color: Black

    Structure: TO-247

Basic Info.

Model NO.U30D40CMaterialSilicon
Features1High Surge CapacityFeatures2Low Power Loss, High Efficiency
Features3Glass Passivated Chip JunctionsFeatures4150ºC Operating Junction Temperature
Features5Low Stored Charge Majority Carrier ConductionFeatures6

Low Forward Voltage, High Current Capabilit

Features7High-Switching Speed 50 Nanosecond Recovery TimeFeatures8Plastic Material Used Carries Underwriters Laborat
Transport PackagePlastic PackageSpecificationU30D40C
OriginGuangdong, ChinaProduction Capacity10000 Pieces/Day


Part Name

Ultra-Fast Recovery Rectifier  30A 400V TO-247(3P) U30D40C


Features

1.High Surge Capacity

2.Low Power Loss, High efficiency

3.Glass Passivated chip junctions

4.150ºC Operating Junction Temperature

5.Low Stored Charge Majority Carrier Conduction

6.Low Forward Voltage , High Current Capability

7.High-Switching Speed 50 Nanosecond Recovery Time

8.Plastic Material used Carries Underwriters Laboratory



U30D40C 30A 300-600V TO-247 (3P) Ultra-Fast Recovery Rectifier
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TEL

+86-769-21 665206

E-mail

JENNIE@MERRYELC.COM

WEB

WWW.MERRYELC.COM

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Dongguan Merry Electronic CO.,LTD

Dongguan Merry Electronic CO., LTD Was established in year of 2013,Mainly engaged in design, development and sales semiconductors...

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