DZ09238-F04
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ08038-F06
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ12038-F05
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DA04056-F01
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
SwitchmodeDual S20T150C 20A 150V Schottky Barrier Power Rectifiers
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: TO-220AB
- Parameters
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: TO-220AB
Basic Info.
| Model NO. | S20T150C 20A 150V | Material | Silicon |
| Features1 | Glass Passivated Chip | Features2 | Low Forward Voltage Drop |
| Features3 | Ideal for Printed Circuit Board | Features4 | High Surge Current Capability |
| Transport Package | Plastic Package | Specification | diode |
| Trademark | diode | Origin | Guangdong, China |
| Production Capacity | 10000 Pieces/Day |
Part Name
MMBT3904 SOT-23 NPN Silicon General Purpose Transistor
Features
Switchmode
Dual Schottky Barrier Power Rectifiers
Features
*Low Forward Voltage.
*Low Switching noise.
*High Current Capacity
*Guarantee Reverse Avalanche.
*Guard-Ring for Stress Protection.
*Low Power Loss & High efficiency.
*150ºC Operating Junction Temperature
*Low Stored Charge Majority Carrier Conduction.
*Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
*Pb free
*In compliance with EU RoHs directives
Previous : MMBT3904 SOT-23 NPN Silicon General Purpose Transistor
Next : RS2AA~RS2MA DO-214AC/SMA 2.0Amp Fast Recovery Surface Mounted Rectifiers Diode
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Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...
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