DZ09238-F04
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ08038-F06
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ12038-F05
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DA04056-F01
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
Silicongear DG100N02PB TO-220AB-D DG-FET™ VDSS 100V RDS(ON)max.VGS=10V 3.9mΩ ID=100A N-Channel Power MOSFET
Certification: RoHS, CE, ISO, CCC
Shape: GT
Shielding Type: Remote Cut-Off Shielding Tube
Cooling Method: Naturally Cooled Tube
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency: High Frequenc
- Parameters
Certification: RoHS, CE, ISO, CCC
Shape: GT
Shielding Type: Remote Cut-Off Shielding Tube
Cooling Method: Naturally Cooled Tube
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency: High Frequenc
Basic Info.
| Model NO. | DG100N02PB | Structure | Planar |
| Encapsulation Structure | Chip Transistor | Power Level | High Power |
| Material | Silicon | Features1 | Optimized for synchronous rectification Low Input |
| Features2 | Low Switching Charge | Features3 | Low Miller Capacitance |
| Features4 | Fully Characterized Capacitance and Avalanche | Application1 | Battery powered circuits |
| Application3 | BLDC Motor drive applications | Application4 | Half-bridge and full-bridge topologies |
| Application5 | Synchronous rectifier applications | Application6 | Resonant mode power supplies |
| Transport Package | Plastic Package | Specification | DG100N02PB |
| Trademark | Silicongear | Origin | Guangdong, China |
| Production Capacity | 10000 Pieces/Day |
Part Name
Silicongear DG100N02PB TO-220AB-D DG-FET™ VDSS 100V RDS(ON)max.VGS=10V 3.9mΩ ID=100A N-Channel Power MOSFET
Previous : Silicongear DG100N03PB TO-220AB-D VDSS=100V RDS(ON) max. VGS=10V 10mΩ ID=77A DG-FET™ 100V N-Channel Power MOSFET
Next : Silicongear SG150N06P TO-220 VDSS,150V RDS(ON),12mΩ (max.)@VGS=10V,ID,119A 150V N-Channel Power MOSFET
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Silicongear DG100N02PB TO-220AB-D DG-FET™ VDSS 100V RDS(ON)max.VGS=10V 3.9mΩ ID=100A N-Channel Power MOSFET
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Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...
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