DZ09238-F04

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DZ08038-F06

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DZ12038-F05

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DA04056-F01

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

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图片展示

RU8205G 20V/6A TSSOP-8 N-Channel Advanced Power MOSFET FOR BMS RU8205C6 Semiconductor Diode MOS

    Certification: RoHS, CE, ISO, CCC

    Shape: GT

    Shielding Type: Remote Cut-Off Shielding Tube

    Cooling Method: Naturally Cooled Tube

    Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor

    Working Frequency: High Frequency


  • Parameters

    Certification: RoHS, CE, ISO, CCC

    Shape: GT

    Shielding Type: Remote Cut-Off Shielding Tube

    Cooling Method: Naturally Cooled Tube

    Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor

    Working Frequency: High Frequency


Basic Info.

Model NO.RU8205GStructurePlanar
Encapsulation StructureChip TransistorPower LevelHigh Power
MaterialSiliconFeatures1Low RDS (ON)
Features2Super High Dense Cell DesignFeatures3Lead Free and Green Devices Available (RoHS Compli
Features4Reliable and RuggedApplication1Power Management
Application4Uninterruptible Power Supply (UPS)Application5BMS
Transport PackagePlastic PackageSpecificationRU8205G
OriginGuangdong, ChinaProduction Capacity10000 Pieces/Day


RU8205G 20V 6A TSSOP-8 N-Channel Advanced Power MOSFET

More Product Models:

RU8205G

RU8205G 20V/6A TSSOP-8 N-Channel Advanced Power MOSFET FOR BMS RU8205C6 Semiconductor Diode MOS
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Dongguan Merry Electronic CO.,LTD

Dongguan Merry Electronic CO., LTD Was established in year of 2013,Mainly engaged in design, development and sales semiconductors...

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