Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: SO-10RF
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: SO-10RF
Basic Info.
Model NO. | PD55008-E | Material | Silicon |
Features1 | Glass Passivated Chip | Features2 | Low Forward Voltage Drop |
Features3 | Ideal for Printed Circuit Board | Features4 | High Surge Current Capability |
Transport Package | Plastic Package | Origin | Guangdong, China |
Production Capacity | 10000 Pieces/Day |
Product Description
Part Name
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs PD55008-E
Features
1.Excellent thermal stability
2.Common source configuration
3.POUT = 8 W with 17dB gain @ 500 MHz/12.5 V
4.New RF plastic package
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz.
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