DZ09238-F04
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ08038-F06
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ12038-F05
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DA04056-F01
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
MBRF10150CK ITO-220F SwitchmodeFull Plastic Dual Schottky Barrier Power Rectifiers Semiconductor Diode
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: to-3p
- Parameters
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: to-3p
Basic Info.
| Model NO. | TD5G10120D | Material | Silicon |
| Features1 | 1.2kV Schottky Rectifier | Features2 | Zero Reverse Recovery Current |
| Features3 | High-Frequency Operation | Features4 | Temperature-Independent Switching |
| Features5 | Extremely Fast Switching | Transport Package | Plastic Package |
| Origin | Guangdong, China | Production Capacity | 10000 Pieces/Day |
Part Name
MBRF10150CK ITO-220F SwitchmodeFull Plastic Dual Schottky Barrier Power Rectifiers
Features
1.Low Forward Voltage
2.Low Switching noise
3.High Current Capacity
4.Guarantee Reverse Avalanche
5.Guard-Ring for Stress Protection
6.Low Power Loss & High efficiency
7.150ºC Operating Junction Temperature
8.Low Stored Charge Majority Carrier Conduction
9.Plastic Material used Carries Underwriters Laboratory
10.Flammability Classification 94V-O
11. Pb free / In compliance with EU RoHs directives
Previous : TD5G20120D 1200V 20A TO-247 Silicon Carbide Schottky Diode SiC Diode
Next : MBR30150CT TO-220AB Schottky Barrier Rectifier Reverse Voltage - 40 to 200 V Forward Current - 30 A
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Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...
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