DZ09238-F04
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ08038-F06
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ12038-F05
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DA04056-F01
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
Hcs65r210st 650V N-Channel Super Junction Mosfet
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: to-220FT
- Parameters
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: to-220FT
Basic Info.
| Model NO. | HCS65R210ST | Material | Silicon |
| Features1 | Glass Passivated Chip | Features2 | Low Forward Voltage Drop |
| Features3 | Ideal for Printed Circuit Board | Features4 | High Surge Current Capability |
| Transport Package | Plastic Package | Origin | Guangdong, China |
| Production Capacity | 10000 Pieces/Day |
Product Description
650V N-Channel Super Junction MOSFET HCS65R210ST SEMIHOW
Features
1.Very Low FOM (RDS(on) X Qg )
2. Extremely low switching loss
3. Excellent stability and uniformity
4. 100% Avalanche Tested
5.Built-in ESD Diode
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Next : Hcs60r150s 600V N-Channel Super Junction Mosfet
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Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...
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