DZ09238-F04

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

DZ08038-F06

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

DZ12038-F05

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

DA04056-F01

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

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Detail

Hca65r130f 650V 130mΩ Coolmosfet High Power Fast Recovery Diode

    Encapsulation Structure: Chip Transistor

    Application: LED Drive Power Supply, Medical Power Supply

    Certification: RoHS, CE, ISO, CCC

    Luminous Intensity: Standard

    Color: Black

    Structure: to-247


  • Parameters

    Encapsulation Structure: Chip Transistor

    Application: LED Drive Power Supply, Medical Power Supply

    Certification: RoHS, CE, ISO, CCC

    Luminous Intensity: Standard

    Color: Black

    Structure: to-247


Basic Info.

Model NO.HCA65R130F TO-247StructureSilicon
Features1Glass Passivated ChipFeatures2Low Forward Voltage Drop
Features3Ideal for Printed Circuit BoardFeatures4High Surge Current Capability
Transport PackagePlastic PackageSpecificationHca65r130f
TrademarkHca65r130fOriginGuangdong, China
Production Capacity10000 Pieces/Day


Product Neme

HCA65R130F

650V N-Channel Super Junction MOSFET

Features

•   Very Low FOM (RDS(on) X Qg)

•  Extremely low switching loss

•  Excellent stability and uniformity

•  100% Avalanche Tested

•  Built-in ESD Diode

•  Fast Recovery Time

Previous : LND12N65 TO-220F N-channel 650V,12A Power MOSFET HV Planar MOSFET VDMOS Next : 600V 115mΩ N-Channel Hcs60r115s to-220f Super Junction Coolmosfet
Hca65r130f 650V 130mΩ Coolmosfet High Power Fast Recovery Diode
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Dongguan Merry Electronic CO.,LTD

Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...

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