DZ09238-F04
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ08038-F06
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ12038-F05
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DA04056-F01
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DDR SDRAM H5TQ4G63EFR-RDC 4Gb DDR3 SDRAM
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: 78ball FBGA
- Parameters
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: 78ball FBGA
Basic Info.
| Model NO. | H5TQ4G63EFR-RDC | Material | Silicon |
| Features1 | Glass Passivated Chip | Features2 | Low Forward Voltage Drop |
| Features3 | Ideal for Printed Circuit Board | Features4 | High Surge Current Capability |
| Transport Package | Plastic Package | Origin | Guangdong, China |
| Production Capacity | 10000 Pieces/Day |
Product Description
Part Name
DDR SDRAM H5TQ4G63EFR-RDC 4Gb DDR3 SDRAM
Features
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 13
and 14 supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9
and 10
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
* This product in compliance with the RoHS directive.
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Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...
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