DZ09238-F04

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

DZ08038-F06

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

DZ12038-F05

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

DA04056-F01

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

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Detail

80V/85A 5.7mΩ DG80N02Q N-Channel Advanced Power Mosfet

    Certification: RoHS, CE, ISO, CCC

    Shape: GT

    Shielding Type: Remote Cut-Off Shielding Tube

    Cooling Method: Naturally Cooled Tube

    Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor

    Working Frequency: High Frequency


  • Parameters

    Certification: RoHS, CE, ISO, CCC

    Shape: GT

    Shielding Type: Remote Cut-Off Shielding Tube

    Cooling Method: Naturally Cooled Tube

    Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor

    Working Frequency: High Frequency


Basic Info.

Model NO.DG80N02QStructurePlanar
Encapsulation StructureChip TransistorPower LevelHigh Power
MaterialSiliconFeatures1Extremely Low Switching Loss
Features2Excellent Stability and UniformityFeatures3100% Avalanche Tested
Features4Built-in ESD DiodeApplication1Switch Mode Power Supply (SMPS)
Application3Power Factor Correction (Pfc)Application4Uninterruptible Power Supply (UPS)
Application5AC to DC ConvertersApplication6Telecom, Solar
Transport PackagePlastic PackageOriginGuangdong, China
Production Capacity30000 Pieces/Day
,


Product Description

N-Channel Advanced Power Mosfet 80V/85A 5.7mΩ  DG80N02Q

Previous : CEM9926A 20V 6A SO-8 package N-Channel Enhancement Mode Field Effect Transistor MOSFET Next : HCFL65R210 DFN8*8 650V N-Channel Super Junction MOSFET COOLMOS
80V/85A 5.7mΩ DG80N02Q N-Channel Advanced Power Mosfet
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Dongguan Merry Electronic CO.,LTD

Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...

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