DZ09238-F04

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

DZ08038-F06

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

DZ12038-F05

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

DA04056-F01

类 型：双滚珠

风 量：90.57~123.50CFM

尺 寸：80x80x38mm

额定电压：12V

重 量：153.0g

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Detail

60V/200A 2.8mΩ RU6199S-R Professional Transistor Wholesale Advanced Power

    Certification: RoHS, CE, ISO, CCC

    Shape: GT

    Shielding Type: Remote Cut-Off Shielding Tube

    Cooling Method: Naturally Cooled Tube

    Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor

    Working Frequency: High Frequency


  • Parameters

    Certification: RoHS, CE, ISO, CCC

    Shape: GT

    Shielding Type: Remote Cut-Off Shielding Tube

    Cooling Method: Naturally Cooled Tube

    Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor

    Working Frequency: High Frequency


Basic Info.

Model NO.RU6199S-RStructurePlanar
Encapsulation StructureChip TransistorPower LevelHigh Power
MaterialSiliconFeatures1Extremely Low Switching Loss
Features2Excellent Stability and UniformityFeatures3100% Avalanche Tested
Features4Built-in ESD DiodeApplication1Switch Mode Power Supply (SMPS)
Application3Power Factor Correction (Pfc)Application4Uninterruptible Power Supply (UPS)
Application5AC to DC ConvertersApplication6Telecom, Solar
Transport PackagePlastic PackageOriginGuangdong, China
Production Capacity40000 Pieces/Day


Product Description

Professional Transistor Wholesale Advanced Power 60V/200A 2.8mΩ RU6199S-R


Features

1.60V/200A

2.Super High Dense Cell Design

3.Ultra Low On-resistance

4.100% avalanche tested

5.Lead Free and Green Devices Available(Rohs Compliant)



Previous : 100V/150A 3.2mΩ RUH1H150R N-Channel Advanced Power Mosfet Next : HCW65R380 TO-263 Coolmos 650V 380mΩ High Voltage MOS
60V/200A 2.8mΩ RU6199S-R Professional Transistor Wholesale Advanced Power
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+86-769-21 665206

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Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...

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