DZ09238-F04
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ08038-F06
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ12038-F05
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DA04056-F01
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
120V/90A 6.2mΩ RUH120N90M N-Channel Advanced Power Mosfet
Certification: RoHS, CE, ISO, CCC
Shape: GT
Shielding Type: Remote Cut-Off Shielding Tube
Cooling Method: Naturally Cooled Tube
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency: High Frequency
- Parameters
Certification: RoHS, CE, ISO, CCC
Shape: GT
Shielding Type: Remote Cut-Off Shielding Tube
Cooling Method: Naturally Cooled Tube
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency: High Frequency
Basic Info.
| Model NO. | RUH120N90M | Structure | Planar |
| Encapsulation Structure | Chip Transistor | Power Level | High Power |
| Material | Silicon | Features1 | Extremely Low Switching Loss |
| Features2 | Excellent Stability and Uniformity | Features3 | 100% Avalanche Tested |
| Features4 | Built-in ESD Diode | Application1 | Switch Mode Power Supply (SMPS) |
| Application3 | Power Factor Correction (Pfc) | Application4 | Uninterruptible Power Supply (UPS) |
| Application5 | AC to DC Converters | Application6 | Telecom, Solar |
| Transport Package | Plastic Package | Origin | Guangdong, China |
| Production Capacity | 12000 Pieces/Day |
Introduction
N-Channel Advanced Power Mosfet 120V/90A 6.2mΩ RUH120N90M
Features
1.120V/90A
2.Ultra Low On-Resistance
3.Fast Switching Speed
4.100% avalancehe tested
5.Uses Ruichips advanced technology
6.Lead Free and Green Devices Available(RoHS Compliant)
Application
1.Synchronous Rectification for Flyback Converters
2.PD Adaptors
3.Charger for Mobile
Previous : 100V/80A 6.5mΩ RUH1H80R N-Channel Advanced Power Mosfet
Next : LSD65R650HT N-channel 650V, 7A1), 0.65Ω LonFETTM Power MOSFET
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Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...
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