DZ09238-F04
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ08038-F06
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ12038-F05
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DA04056-F01
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
Ruh1h150s 100V/150A N-Channel Advanced Power Mosfet
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: To263
- Parameters
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: To263
Basic Info.
| Model NO. | RUH1H150S | Material | Silicon |
| Features1 | Glass Passivated Chip | Features2 | Low Forward Voltage Drop |
| Features3 | Ideal for Printed Circuit Board | Features4 | High Surge Current Capability |
| Transport Package | Plastic Package | Origin | Guangdong, China |
| Production Capacity | 10000 Pieces/Day |
Product Description
N-Channel Advanced Power MOSFET RUH1H150S 100V/150A
Features
1.100V/50A
2.RDS (ON) =3.2mΩ(Typ.) @ VGS=10V
3.Excellent QgxRDS(on) Product
4.Ultra Low On-Resistance
5.175°C Operating Temperature
6.Lead Free and Green Devices Available (RoHS Compliant)
7.100% avalanche tested
8.Advanced HEFET® Technology
Previous : 40V/40A Ruh4040m N-Channel Advanced Power Mosfet
Next : 100V/80A Ruh1h80r N-Channel Advanced Power Mosfet
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Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...
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