DZ09238-F04
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ08038-F06
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ12038-F05
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DA04056-F01
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
RUH1H150S-R 100V/150A N-Channel Advanced Power MOSFET
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: TO-263
- Parameters
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: TO-263
Basic Info.
| Model NO. | RUH1H150S-R | Structure | Silicon |
| Features1 | Glass Passivated Chip | Features2 | Low Forward Voltage Drop |
| Features3 | Ideal for Printed Circuit Board | Features4 | High Surge Current Capability |
| Transport Package | Plastic Package | Specification | coolmos |
| Trademark | coolmos | Origin | Guangdong, China |
| Production Capacity | 10000 Pieces/Day |
Product Neme
Features Pin Description
• 100V/150A,
RDS (ON) =3.2mΩ(Typ.)@VGS=10V
• Advanced HEFET® Technology
• Ultra Low On-Resistance
• Excellent QgxRDS(on) Product
l h t t d
D
TO263
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Previous : N-Channel 40V/40A, RUH4040M Advanced Power MOSFET
Next : N-Channel RUH1H80R dvanced Power 100V/80A MOSFET
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Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...
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