Certification: RoHS, CE, ISO, CCC
Shape: GT
Shielding Type: Remote Cut-Off Shielding Tube
Cooling Method: Naturally Cooled Tube
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency: High Frequency
Certification: RoHS, CE, ISO, CCC
Shape: GT
Shielding Type: Remote Cut-Off Shielding Tube
Cooling Method: Naturally Cooled Tube
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency: High Frequency
Basic Info.
Model NO. | RU10N65P | Structure | Planar |
Encapsulation Structure | Chip Transistor | Power Level | High Power |
Material | Silicon | Features1 | LowRDS(on) |
Features2 | Lowgatecharge(typ.Qg=41.9nC) | Features3 | 100%UIStested |
Features4 | RoHScompliant | Application3 | Power Factor Correction (Pfc) |
Application4 | Switchedmodepowersupplies. | Application6 | LEDdriver. |
Transport Package | Plastic Package | Specification | TO-220F |
Origin | Guangdong, China | Production Capacity | 10000 Pieces/Day, China |
Product Description
RU10N65P 650V/10A N-Channel Advanced Power MOSFET HV Planar MOSFET VDMOS
More Product Models:
RU4N65,RU7N65,RU10N65,RU12N65,RU13N50, RU6N65,RU18N50,RU20N65
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