DZ09238-F04
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ08038-F06
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ12038-F05
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DA04056-F01
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
60V/230A 2.5mΩ Ru60200r N-Channel Advanced Power Mosfet
Certification: RoHS, CE, ISO, CCC
Shape: GT
Shielding Type: Remote Cut-Off Shielding Tube
Cooling Method: Naturally Cooled Tube
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency: High Frequency
- Parameters
Certification: RoHS, CE, ISO, CCC
Shape: GT
Shielding Type: Remote Cut-Off Shielding Tube
Cooling Method: Naturally Cooled Tube
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency: High Frequency
Basic Info.
| Model NO. | RU60200R TO-220 | Structure | Planar |
| Encapsulation Structure | Chip Transistor | Power Level | High Power |
| Material | Silicon | Features1 | Extremely Low Switching Loss |
| Features2 | Excellent Stability and Uniformity | Features3 | 100% Avalanche Tested |
| Features4 | Built-in ESD Diode | Application1 | Switch Mode Power Supply (SMPS) |
| Application3 | Power Factor Correction (Pfc) | Application4 | Uninterruptible Power Supply (UPS) |
| Application5 | AC to DC Converters | Application6 | Telecom, Solar |
| Transport Package | Plastic Package | Origin | Guangdong, China |
| Production Capacity | 12000 Pieces/Day |
Product Description
Part Name
N-Channel Advanced Power Mosfet 60V/230A 2.5mΩ Ru60200r
Features
1.60V 230A
2.Ultra Low On-Resistance
3.Exceptional dv/dt capability
4.Fast Switching and Fully Avalanche Rated
5.100% avalanche tested
6.175C Operating Temperature
7.Lead Free and Green Available
Application
1.Switching Application Systems
2.Inverter Systems
Previous : 600V 115mΩ N-Channel Hcs60r115s to-220f Super Junction Coolmosfet
Next : Hca60r070f 600V N-Channel Super Junction High Power Coolmosfet
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Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...
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