DZ09238-F04
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ08038-F06
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DZ12038-F05
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
DA04056-F01
类 型：双滚珠
风 量：90.57~123.50CFM
尺 寸：80x80x38mm
额定电压：12V
重 量：153.0g
30V 30A Pdfn3333 Trench Ru3030m2 N-Channel Advanced Power Mosfet
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: Pdfn3333
- Parameters
Encapsulation Structure: Chip Transistor
Application: LED Drive Power Supply, Medical Power Supply
Certification: RoHS, CE, ISO, CCC
Luminous Intensity: Standard
Color: Black
Structure: Pdfn3333
Basic Info.
| Model NO. | RU3030M2 | Material | Silicon |
| Features1 | Glass Passivated Chip | Features2 | Low Forward Voltage Drop |
| Features3 | Ideal for Printed Circuit Board | Features4 | High Surge Current Capability |
| Transport Package | Plastic Package | Origin | Guangdong, China |
| Production Capacity | 10000 Pieces/Day |
Product Description
N-Channel Advanced Power MOSFET 30V/30A RU3030M2
Features
1.30V/30A
2.RDS (ON) =7mΩ(Typ.) @ VGS=10V
3.RDS (ON) =10Ω@(Typ.) @ VGS=4.5V
4.Super High Dense Cell Design
5.Fast Switching Speed
6.Low gate Charge
7.Lead Free and Green Available
8.100% avalanche tested
Previous : Ru7080s 70V/80A N-Channel Advanced Power Mosfet
Next : 40V -32A Ru40L10L P-Channel Advanced Power Mosfet
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Dongguan Merry Electronic CO., LTD Was established in year of 2013，Mainly engaged in design, development and sales semiconductors...
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